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Том 4 (1), стр. 20-47, 2026

Обзор

Обзор технологии обработки поверхностей и тонких плёнок облучением газовыми кластерными ионами

А. В. Назаров

Московский государственный университет имени М.В. Ломоносова, научно-исследовательский институт ядерной физики имени Д. В. Скобельцына, Ленинские горы, д. 1, стр. 2, 119991, Москва, Россия

Московский государственный университет имени М.В. Ломоносова, физический факультет, кафедра физической электроники, Ленинские горы, д. 1, стр. 2, 119991, Москва, Россия

e-mail: av.nazarov@physics.msu.ru

Д. С. Киреев

Московский государственный университет имени М.В. Ломоносова, физический факультет, кафедра физической электроники, Ленинские горы, д. 1, стр. 2, 119991, Москва, Россия

А. Е. Иешкин

Московский государственный университет имени М.В. Ломоносова, физический факультет, кафедра физической электроники, Ленинские горы, д. 1, стр. 2, 119991, Москва, Россия

Д. Р. Бессмертный

Московский государственный университет имени М.В. Ломоносова, физический факультет, кафедра физической электроники, Ленинские горы, д. 1, стр. 2, 119991, Москва, Россия

И. Н. Кутлусурин

Московский государственный университет имени М.В. Ломоносова, физический факультет, кафедра физической электроники, Ленинские горы, д. 1, стр. 2, 119991, Москва, Россия

В. С. Черныш

Московский государственный университет имени М.В. Ломоносова, научно-исследовательский институт ядерной физики имени Д. В. Скобельцына, Ленинские горы, д. 1, стр. 2, 119991, Москва, Россия

Московский государственный университет имени М.В. Ломоносова, физический факультет, кафедра физической электроники, Ленинские горы, д. 1, стр. 2, 119991, Москва, Россия

УДК 539.1.06

DOI: https://doi.org/10.62539/2949-5644-2026-4-1-20-47

Аннотация

В настоящее время в индустрии сверхпроводников отдельное место занимают высокотемпературные сверхпроводящие (ВТСП) ленты 2-го поколения. Они представляют собой планарные структуры, где слой ВТСП эпитаксиально осаждается на многослойный буфер. В таком кабеле критически важными оказываются как морфология самого сверхпроводящего слоя, так и структура интерфейсов. Технология пучков газовых кластерных ионов (gas cluster ion beam, GCIB) — это относительно новая технология обработки поверхности материалов. Технология GCIB широко используется, в частности, для сверхтонкой финишной полировки и планаризации поверхности благодаря особенностям взаимодействия кластерного иона с материалом и малой глубине нарушенного слоя. В статье представлен подробный обзор технологии модификации поверхности различных материалов, в том числе тонких пленок, с помощью GCIB. В обзоре рассматриваются принципы получения и устройство ускорителей пучков газовых кластерных ионов, механизмы их взаимодействия с поверхностью, а также основные эффекты кластерного облучения такие как сглаживание и наноструктурирование рельефа и модификация состава поверхности мишени. Кроме того, в статье приводятся известные данные по облучению газовыми кластерными ионами материалов, связанных с технологией сверхпроводников и обсуждаются потенциальные перспективы применения GCIB при производстве ВТСП лент 2-го поколения с целью улучшения их характеристик.

Ключевые слова: газовые кластерные ионы; обработка поверхности; тонкие плёнки; распыление; сглаживание поверхности; наноструктурирование.

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